The JANSR2N7480U3 from VPT Components is a radiation hardened N-channel MOSFET designed to provide efficient switching and reliable power control in high-reliability aerospace and defense electronics. Featuring a drain-source voltage of 60 V, it is optimized for demanding power conversion systems requiring dependable operation in harsh radiation environments. Packaged in a compact surface-mount configuration, it supports integration into space-constrained electronic assemblies.

This high-performance MOSFET delivers a low drain-source on-resistance of up to 60 mΩ, minimizing conduction losses and improving overall system efficiency. It offers a total gate charge of 45 nC for effective switching performance and supports a continuous drain current of 10 μA. These characteristics make it suitable for precision power management and low-loss switching designs where efficiency and reliability are critical.

Qualified to withstand total ionizing dose levels up to 100 krad(Si), the device is engineered for long-term operation in radiation-exposed environments. Robust and dependable, the JANSR2N7480U3 is ideal for DC-DC converters, low-loss switching applications and other mission-critical aerospace and defense power systems requiring radiation tolerant semiconductor performance.