The IRHQ6110 from Infineon Technologies is a Radiation-Hardened Combination 2N-2P Channel Power MOSFET designed for efficient power switching in high-reliability space and defense electronic systems. Supporting both N-channel and P-channel configurations, it enables flexible and efficient power control in compact designs. With a drain-source voltage rating of 100 V for N-channel and -100 V for P-channel, it is well suited for demanding applications requiring robust switching performance.

This MOSFET supports a continuous drain current of up to 3 A for the N-channel and -2.3 A for the P-channel, along with a pulsed drain current of up to 12 A. It features a diode forward voltage of approximately 1.2 V and a gate-source threshold voltage range of 2 to 4 V for stable operation. Built using HEXFET radiation-hardened technology, it offers total ionizing dose tolerance of up to 100 krad(Si). The device is optimized for efficiency with a low total gate charge of 16/17 nC (N/P) and a low drain-source on-state resistance of 0.6 to 1.1 ohms, reducing switching losses and improving performance.

Constructed for high-reliability environments, the MOSFET is housed in a hermetically sealed surface-mount package measuring 11.68 x 11.68 x 2.41 mm. It complies with MIL-PRF-750 standards, ensuring suitability for mission-critical applications. The IRHQ6110 is ideal for DC-DC converters, motor drivers and space systems requiring radiation tolerance, efficient power management and dependable switching performance.