Space Qualified Memory

141 Space Qualified Memory for Space Applications from 9 manufacturers listed on SatNow

Space Qualified Memory from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

Description:144-Mbit QDR II+ SRAM Two-Word Burst Architecture with RadStop Technology
Memory Type:
SRAM
Storage Capacity:
144 Mb
Volatility:
Volatile
Radiation Dose:
200 krad
Standard:
MIL-PRF-38535
Voltage:
1.7 to 1.9 V
Current:
900 to 1080 mA
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
165-ball CCGA
Application:
Military
more info
SKU:AT68166H
Memory Type:
SRAM
Storage Capacity:
16 Mb
Volatility:
Volatile
Read Access Time:
18 to 20 ns
Write Access Time:
18 to 20 ns
Bit Size:
512K x 8, 512K x 16
Output Waveform:
TTL
Radiation Dose:
300 krad(Si)
Mass:
8.5 gms
Standard:
MIL-PRF-38535, ESCC 9000
Voltage:
3.3 V
Current:
20 mA
Power Consumption:
0.415 to 0.620 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
Hermetic, MQFPT68
Application:
Space
more info
SKU:DDR4
Memory Type:
DDR4
Storage Capacity:
4 Gb, 8 Gb
Volatility:
Volatile
Radiation Dose:
100 krad(Si)
Mass:
1.2 gms
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-55 to 125 Degree C
Application:
Ultra High Density Memory Solution, targeting Space Embedded Systems
Dimension:
15 x 20 x 1.92 mm (Module Size)
more info
SKU:69F12G24
Memory Type:
NAND Flash
Storage Capacity:
256 Mb
Volatility:
Non-Volatile
Read Access Time:
16 to 25 ns
Write Access Time:
20 ns
Radiation Dose:
100 krad
Mass:
15 gms, 19 gms
Voltage:
3 to 3.6 V
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
Flat Pack
Application:
Space Applications
more info
Description:HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136 is a 1024-word by 36-bit memory array
Memory Type:
SRAM
Storage Capacity:
36 Mb
Volatility:
Volatile
Read Access Time:
36 ns
Write Access Time:
36 ns
Bit Size:
36 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Operating Temperature:
-55 to 125 Degree C
Package:
32-Lead CFP, 68-Lead CQFP, 132-Lead CQFP
more info
Description:SDRAM multi-chip module (MCM). The device is 2.5Gb in density and organized as 64Mx40 (16M x 40 x 4 banks)
Memory Type:
SDRAM
Storage Capacity:
2.5 Gb
Volatility:
Volatile
Output Waveform:
LVTTL
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+
Voltage:
3.3 V
Power Consumption:
4 W
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
128-lead Ceramic Quad Flatpack, deep side-braze
Application:
Ideal for LEON Processors (UT700, GR712)
more info
Memory Type:
SRAM
Volatility:
Volatile
Radiation Dose:
100 krad
Standard:
MIL-PRF-38535, MIL-STD-883
Voltage:
2.5 to 3.3 V
Package:
84-lead FP
Application:
Specific, Test & Measurement, Military, Commercial, Space, Avionics
more info
SKU:AS3064B16
Memory Type:
SRAM
Volatility:
Volatile
Read Access Time:
45 ns
Write Access Time:
45 ns
Data Retention:
10 to 1000000 Years
Voltage:
2.7 to 3.6 V
Operating Temperature:
-40 to 125 Degree C
Package:
48-ball FBGA
Application:
Automotive, Military
Dimension:
10 x 10 mm
more info
Description:144-Mbit QDR SRAM Four-Word Burst Architecture with RadStop Technology
Memory Type:
SRAM
Storage Capacity:
144 Mb
Volatility:
Volatile
Read Access Time:
1 ms (first access)
Radiation Dose:
200 krad
Standard:
MIL-STD-883
Voltage:
1.7 to 1.9 V
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
CCGA
Application:
Military, edges
Dimension:
21 × 25 × 2.83 mm
more info
SKU:AT68166HT
Memory Type:
SRAM
Storage Capacity:
16 Mb
Volatility:
Volatile
Read Access Time:
18 to 25 ns
Write Access Time:
18 to 20 ns
Bit Size:
512K x 8, 512K x 16
Output Waveform:
TTL
Radiation Dose:
300 krad(Si)
Mass:
8.5 gms
Standard:
MIL-PRF-38535, ESCC 9000
Voltage:
3.3 V ±0.3 V, 5 V (Tolerant)
Current:
20 mA
Power Consumption:
0.415 to 0.595
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
MQFPT68
Application:
Space
more info

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