Space Qualified Memory

140 Space Qualified Memory for Space Applications from 8 manufacturers listed on SatNow

Space Qualified Memory from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

Description:144-Mbit QDR SRAM Two-Word Burst Architecture with ODT and RadStop Technology
Memory Type:
SRAM
Storage Capacity:
144 Mb
Volatility:
Volatile
Read Access Time:
1 ms (first access)
Radiation Dose:
200 krad
Standard:
MIL-STD-883
Voltage:
1.7 to 1.9 V
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
CCGA
Application:
Military, edges
Dimension:
21 × 25 × 2.83 mm
more info
SKU:AT60142H
Memory Type:
SRAM, RAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
15 ns
Write Access Time:
15 ns
Bit Size:
524 x 288 x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
300 krad(Si)
Standard:
MIL-STD-883, QML-Q, QML-V, MIL-PRF-38535, ESCC 9000
Voltage:
3 to 3.6 V
Current:
1 mA
Power Consumption:
540 to 650 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Aerospace electronics, portable instruments, embarked systems
more info
SKU:DDR4
Memory Type:
DDR4
Storage Capacity:
4 Gb, 8 Gb
Volatility:
Volatile
Radiation Dose:
100 krad(Si)
Mass:
1.2 gms
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-55 to 125 Degree C
Application:
Ultra High Density Memory Solution, targeting Space Embedded Systems
Dimension:
15 x 20 x 1.92 mm (Module Size)
more info
SKU:89LV1632
Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
20, 25, 30 ns
Write Access Time:
20 to 30 ns
Radiation Dose:
100 krad
Mass:
42 gms
Voltage:
3 to 3.6 V
Current:
310 to 330 mA
Power Consumption:
4 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
68-pin quad flat package
Application:
Space Applications
more info
Description:32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory
Memory Type:
SRAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
17 ns
Write Access Time:
25 ns
Bit Size:
32K x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Current:
25 mA
Power Consumption:
600 mW (at 40 MHz)
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-Lead CFP, 28-Lead DIP, 36-Lead CFP—Bottom Braze, 36-Lead CFP –Top Braze
Application:
Space and military
more info
Description:64 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
2 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Memory Type:
SRAM
Volatility:
Volatile
Radiation Dose:
100 krad
Standard:
MIL-PRF-38535, MIL-STD-883
Voltage:
2.5 to 3.3 V
Package:
84-lead FP
Application:
Specific, Test & Measurement, Military, Commercial, Space, Avionics
more info
SKU:AS3016B16
Memory Type:
SRAM
Volatility:
Volatile
Read Access Time:
45 ns
Write Access Time:
45 ns
Data Retention:
10 to 1000000 Years
Voltage:
2.7 to 3.6 V
Operating Temperature:
-40 to 125 Degree C
Package:
48-ball FBGA
Application:
Automotive, Military
Dimension:
10 x 10 mm
more info
Description:144-Mbit QDR SRAM Four-Word Burst Architecture with ODT and RadStop Technology
Memory Type:
SRAM
Storage Capacity:
144 Mb
Volatility:
Volatile
Read Access Time:
1 ms (first access)
Radiation Dose:
200 krad
Standard:
MIL-STD-883
Voltage:
1.7 to 1.9 V
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
CCGA
Application:
Military, edges
Dimension:
21 × 25 × 2.83 mm
more info
SKU:AT60142HT
Memory Type:
SRAM, RAM
Storage Capacity:
4 Mb
Volatility:
Volatile
Read Access Time:
15 to 17 ns
Write Access Time:
15 to 17 ns
Bit Size:
512K x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
300 krad(Si)
Standard:
MIL-PRF-38535, ESCC 9000
Voltage:
3.3 V, 5 V (Tolerant)
Current:
1 mA
Power Consumption:
540 to 610 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Aerospace electronics, portable instruments, embarked systems
more info

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