The HXS6408 from Honeywell Aerospace is a Space-Qualified Memory with a configuration of 512K x 8-bit memory. This monolithic static 8-bit RAM is fabricated with Honeywell’s silicon-on-insulator CMOS (S150) technology. It has a write access time of 7 ns and a storage capacity of 8 Mb. This monolithic static RAM has an average output current of 15 mA and has a package power dissipation of 0.7 W. It has a junction temperature of 175 deg C and a power consumption of 80 mW. The SRAM operates over the full military temperature range and requires a DC power supply of 1.8 V. This space-qualified SRAM is available with CMOS-compatible I/O ports. The memory cell is single-event upset hardened with multi-layer metal power busing, and small collection volumes of SOI provide superior single-event effect and dose rate hardening. The SRAM is designed for use in low-voltage systems operating in radiation environments.
