The IRHG7110 from Infineon Technologies is a Space-Qualified N-Channel Power MOSFET that has a drain-source voltage of 100 V and a continuous drain current of up to 1.0 A. It has a radiation tolerance TID of up to 100 krad with IR HiRel HEXFET technology and has a pulsed drain current of 4.0 A. The MOSFET has a diode forward voltage of 1.2 V and a gate-source threshold voltage range of 2-4 V. It has a low total gate charge of 11 nC and a low drain-source on-state resistance of 0.66 ohms. The MOSFET is available in a hermetically sealed ceramic enclosure measuring 19.30 x 8.12 x 8.88 mm and is ideal for switching applications such as DC-DC converters and motor control and satellite applications.
