The IRHQ567110 from Infineon Technologies is a Radiation-Hardened N-Channel Power MOSFET designed for high-reliability space and defense electronics, enabling efficient power switching in demanding applications. It supports a drain-source voltage of 100 V and a continuous drain current of up to 4.9 A, making it suitable for robust power control systems. This MOSFET is built using Infineon’s HEXFET® radiation-hardened technology and offers a total ionizing dose (TID) tolerance of up to 100 krad(Si), ensuring reliable operation in radiation-prone environments.
It supports a pulsed drain current of up to 18.4 A and features a diode forward voltage of approximately 1.2 V, along with a gate-source threshold voltage range of 2 to 4 V for stable switching characteristics. The device is optimized for high efficiency, with a low total gate charge of 13 nC and a low drain-source on-state resistance of 0.27 ohms, reducing switching losses and improving overall performance.
It is housed in a hermetically sealed surface-mount package measuring 11.68 × 11.68 × 2.41 mm and complies with MIL-PRF-750 standards for high-reliability applications. Compact and robust, the IRHQ567110 MOSFET is ideal for DC-DC converters, motor drivers, and space systems requiring efficient power management, radiation tolerance and reliable switching performance.
