The JANSR2N7479U3 from VPT Components is a radiation hardened N-channel MOSFET that has a drain-source voltage of 100 V and a continuous drain current of 10 μA. It offers a low drain–source on-resistance of upto 110 mΩ and has a total gate charge of 50 nC. This MOSFET is qualified to withstand total ionizing dose levels up to 100 krad(Si) that available in the surface mount package and is ideal for DC-DC converter and low loss switching applications.
