The 2N7002LT1 from onsemi is a Space Qualified N-channel MOSFET has a drain-source breakdown voltage of over 60 V and a gate threshold voltage of 1-2.5 V. This MOSFET has a continuous drain current of up to 800 mA and a thermal resistance of 556°C/W. It has a drain-source on-resistance of 7.5-13.5 ohms and a power dissipation of less than 225 mW. This RoHS-compliant MOSFET is available in a surface-mount package that measures 2.9 x 1.3 x 1 mm. It is ideal for automotive and other applications requiring unique site and control change requirements.