2N7002LT1

Space Qualified MOSFETs by onsemi (2 more products)

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2N7002LT1 Image

The 2N7002LT1 from onsemi is a Space Qualified MOSFETs with Continous Drain Current 0.115 A, Drain Source Resistance 7500 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 V. Tags: Surface Mount. More details for 2N7002LT1 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N7002LT1
  • Manufacturer
    onsemi
  • Description
    60 V N-Channel Enhancement MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.115 A
  • Drain Source Resistance
    7500 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 V
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3

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