Space Qualified Memory - Page 4

174 Space Qualified Memory from 11 Manufacturers meet your specification.
174 Space Qualified Memory from 11 Manufacturers
174 Products from 11 Manufacturers
Page 4 of 12
Description:4Mb/8Mb QSPI 40MHz SPnvSRAM

Product Specs

Memory Type:
SRAM
Volatility:
Volatile
Read Access Time:
150 us
Data Retention:
20 Years
Voltage:
1.7 to 2 V
Current:
30 mA
Programming Endurance:
10^14 Cycles
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-55 to 125 Degree C
Package:
8-Pin WSON, 16-Pin SOIC
Application:
Commercial, Industrial, Automotive
more info
Description:4Mbit Magnetoresistive RAM 8bit 35ns Access Time

Product Specs

Memory Type:
RAM
Storage Capacity:
4 Mb
Read Access Time:
35 ns
Write Access Time:
35 ns
Bit Size:
8 Bits
Package Type:
Surface Mount
Package:
TSOP
more info
Description:3.3 V Tolerant Radiation Hardened 16 Mbit SRAM

Product Specs

Memory Type:
SRAM
Storage Capacity:
16 Mb
Volatility:
Volatile
Read Access Time:
18 to 20 ns
Write Access Time:
18 to 20 ns
Bit Size:
512K x 8, 512K x 16
Output Waveform:
TTL
Radiation Dose:
300 krad(Si)
Mass:
8.5 gms
Voltage:
3.3 V
Current:
20 mA
Power Consumption:
0.415 to 0.620 W
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38535, ESCC 9000
Storage Temperature:
-65 to 150 Degree C
Package:
Hermetic, MQFPT68
Application:
Space
more info
Description:72 Mb Radiation-Hardened Synchronous Pipelined SRAM

Product Specs

Memory Type:
SRAM
Storage Capacity:
72 Mb
Volatility:
Volatile
Read Access Time:
1 ms (first access)
Radiation Dose:
300 krad
Standard:
MIL-STD-883
Voltage:
1.7 to 1.9 V
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
LGA, CCGA
Application:
Military, edges
Dimension:
21 × 25 × 2.83 mm
more info
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Description:Rad Hard NAND Flash Memory

Product Specs

Memory Type:
NAND Flash
Storage Capacity:
256 Mb
Volatility:
Non-Volatile
Read Access Time:
16 to 25 ns
Write Access Time:
20 ns
Radiation Dose:
100 krad
Mass:
15 gms, 19 gms
Voltage:
1.7 to 3.6 V
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38534, MIL-PRF-38535
Storage Temperature:
-65 to 150 Degree C
Package:
Flat Pack
Application:
Space Applications
more info
Description:128M x 32 Parallel Space Grade Non-Volatile Magneto-Resistive Random Access Memory

Product Specs

Space Heritage:
Yes
Memory Type:
EEPROM, Flash, MRAM, SRAM
Storage Capacity:
1 GB, 2 GB, 4 GB, 8 GB
Volatility:
Non-Volatile
Read Access Time:
45 nS
Write Access Time:
45 nS
Bit Size:
1 to 8 Gbits
Data Retention:
20 Years
Radiation Dose:
100 krad
Voltage:
1.8 to 3.6 V
Current:
25 to 840 mA
Programming Endurance:
10^16 Cycles
Operating Temperature:
-40 to 125 Degree C
Space Standard:
PEM INST-001 Level 1
Storage Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
142-PBGA 1mm Pitch
Application:
Reconfigurable computing image storage, Ideal for applications needing low power, infinite endurance requiring the ability to store and retrieve data ...
Dimension:
15 x 17 mm
more info
Description:1K x 36-bit Radiation Hardened First-In First-Out Memory

Product Specs

Orbit:
GEO
Memory Type:
SRAM
Storage Capacity:
36 Mb
Volatility:
Volatile
Read Access Time:
36 ns
Write Access Time:
36 ns
Bit Size:
9 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38535, MIL-STD-883
Storage Temperature:
-65 to 150 Degree C
Package:
32-Lead CFP, 68-Lead CQFP, 132-Lead CQFP
more info
Description:1 Gb Serial NOR Flash Memory

Product Specs

Memory Type:
NOR Flash, SRAM
Storage Capacity:
1 Gb
Volatility:
Non-Volatile, Volatile
Bit Size:
1G x 1-bits
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
2.25 to 3.6 V
Current:
± 10 mA
Power Consumption:
22.5 W (Power Dissipation)
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
142 pin CCGA, CBGA, and CLGA
Application:
Space, Boot memory for microprocessors and FPGAs
more info
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Product Specs

Memory Type:
SRAM
Volatility:
Volatile
Radiation Dose:
100 krad
Standard:
MIL-PRF-38535, MIL-STD-883
Voltage:
2.5 to 3.3 V
Package:
84-lead FP
Application:
Specific, Test & Measurement, Military, Commercial, Space, Avionics
more info
Description:Space-Grade Parallel Persistent SRAM Memory

Product Specs

Memory Type:
SRAM
Volatility:
Volatile
Read Access Time:
45 ns
Write Access Time:
45 ns
Data Retention:
10 to 1000000 Years
Voltage:
2.7 to 3.6 V
Current:
40 to 60 mA
Operating Temperature:
-40 to 125 Degree C
Package:
48-ball FBGA
Application:
Automotive, Military
Dimension:
10 x 10 mm
more info
Description:Rad Hard 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM Memory

Product Specs

Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
20, 25, 30 ns
Write Access Time:
20 to 30 ns
Radiation Dose:
100 krad
Mass:
42 gms
Voltage:
3 to 3.6 V
Current:
310 to 330 mA
Power Consumption:
4 W
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38534, MIL-PRF-38535
Storage Temperature:
-65 to 150 Degree C
Package:
68-pin quad flat package
Application:
Space Applications
more info
Description:512K x 8 Radiation Tolerant, Asynchronous SRAM

Product Specs

Space Heritage:
Yes
Orbit:
LEO, GEO
Memory Type:
SRAM
Storage Capacity:
4 MB
Volatility:
Volatile
Read Access Time:
20 nS
Write Access Time:
20 nS
Bit Size:
4 Mbits
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad
Soft Error Rate:
1.1 x E-9 errors/bit-day
Standard:
MIL-STD-883
Voltage:
3 to 3.6 V
Current:
50 to 76 mA
Operating Temperature:
-55 to 125 Degree C
Space Standard:
QML-Q, QML-V
Storage Temperature:
-65 to 150 Degree C
Package Type:
Ceramic
Package:
36-Lead FP
Application:
Ideal for fault tolerant designs in harsh space environments
more info
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Description:4K x 9-bit Monolithic Radiation Hardened Static RAM

Product Specs

Orbit:
GEO
Memory Type:
SRAM
Storage Capacity:
36 Mb
Volatility:
Volatile
Read Access Time:
36 ns
Write Access Time:
36 ns
Bit Size:
36 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38535, MIL-STD-883
Package:
32-Lead CFP, 68-Lead CQFP, 132-Lead CQFP
more info
Description:512Kx8 SRAM Memory

Product Specs

Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
15 ns
Write Access Time:
15 ns
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad(Si), 1.0E9 rad(Si)/sec (Upset), 1.0E11 rad(Si)/sec (Latchup)
Mass:
3.762 gms
Standard:
QML-Q, QML-V
Voltage:
1.8 to 3.3 V
Current:
±5 mA
Power Consumption:
1.2 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Pin Ceramic
Application:
Ideal for fault tolerant designs for low earth orbits
more info

Product Specs

Memory Type:
SRAM
Volatility:
Volatile
Radiation Dose:
100 krad
Standard:
MIL-PRF-38535, MIL-STD-883
Voltage:
2.5 to 3.3 V
Package:
84-lead FP
Application:
Specific, Test & Measurement, Military, Commercial, Space, Avionics
more info
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