Space Qualified MOSFETs - SATNow

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Infineon Technologies - IRHNJ9130

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-11 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

340 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

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VPT Components - RAD7130-Nyx

Space Qualified MOSFETs from VPT Components

Description:100 V Rad-Hard N-Channel MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Continous Drain Current:

22 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

80 mOhms

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Infineon Technologies - IRHNJ597130

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/712, MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-12.5 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

205 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

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VPT Components - RAD7130-NCx

Space Qualified MOSFETs from VPT Components

Description:100 V Die N-Channel Rad Hard MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Continous Drain Current:

22 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

50 mOhms

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Infineon Technologies - IRHNJ6S7130

Space Qualified MOSFETs from Infineon Technologies

Description:100 V N-channel Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

22 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

42 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

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VPT Components - RAD7130-NNJx

Space Qualified MOSFETs from VPT Components

Description:100 V Surface Mount N-Channel Rad Hard MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Continous Drain Current:

22 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

80 mOhms

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Infineon Technologies - IRHNJ57130

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

22 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

60 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

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Infineon Technologies - IRHMS57064

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

7.6 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

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Infineon Technologies - IRHMS57163SE

Space Qualified MOSFETs from Infineon Technologies

Description:130 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/685, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

130 V

Drain Source Resistance:

15.5 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

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Infineon Technologies - IRHMS57Z60

Space Qualified MOSFETs from Infineon Technologies

Description:30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

30 V

Drain Source Resistance:

5.5 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

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Infineon Technologies - IRHMS9A7064

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/777, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

7 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

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Infineon Technologies - IRHMS67264

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

41 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

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Infineon Technologies - IRHMS6S7160

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

11 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

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Infineon Technologies - IRHMS6S7260

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

29 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

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Infineon Technologies - IRHMB6S7260

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

29 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Tabless Low Ohmic

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Space Qualified MOSFETs - Page 7

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