Space Qualified MOSFETs - SATNow

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHN7130

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

14 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

200 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-1

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHLF87Y20

Space Qualified MOSFETs from Infineon Technologies

Description:20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12 A

Drain Source Breakdown Voltage:

20 V

Drain Source Resistance:

32 milliohm

Gate Source Voltage:

-12 to 12 V

Power Dissipation:

15.6 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-205AF

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHY57230CMSE

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/705

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

230 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHNA597260

Space Qualified MOSFETs from Infineon Technologies

Description:-200 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/713

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-35.5 A

Drain Source Breakdown Voltage:

-200 V

Drain Source Resistance:

102 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-2

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHNM9A7120

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

23 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

55 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

54 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.2

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHNJC9A7034

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/775

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

40 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

18 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHMS57264SE

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

37 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

61 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHNA597160

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V P-Channel Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/713

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-47 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

49 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-2

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHYS9A97034CM

Space Qualified MOSFETs from Infineon Technologies

Description:-60V Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-30 A

Drain Source Breakdown Voltage:

-60 V

Drain Source Resistance:

46 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA Low Ohmic

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHNJ67134

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

19 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

88 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHYB67134CM

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

19 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

90 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA Tabless Low Ohmic

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHY57130CM

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

18 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

70 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHY597230CM

Space Qualified MOSFETs from Infineon Technologies

Description:-200 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/777

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-8 A

Drain Source Breakdown Voltage:

-200 V

Drain Source Resistance:

515 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHM9130

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-11 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

325 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA

Download Datasheet Request Information

Select to compare

Infineon Technologies - IRHNS9A7064

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/777

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

100 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

4 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SupIR-SMD

Explore More Categories

Related News

Related Products

Related News

Related Products

Space Qualified MOSFETs - Page 10

Filters

Types of MOSFET

Manufacturers

Space Standard

Technology

Transistor Polarity

Number of Channel

Continous Drain Current (A)

Drain Source Breakdown Voltage (V)

Channel Configuration

Drain Source Resistance (milliohm)

Gate Source Voltage (V)

Gate Charge (nC)

Power Dissipation (W)

RoHS Compliant

Qualification

Package Type

Country

Popular Searches

Quick Links

Popular Categories

Satellite Calculators

Our Network

Thank You for Subscribing

Create an account

Registered User Benefits

Create an account

Login

Login

Download Media Kit

Download Media Kit

Looking for ?

Select specs based on what you need.

Filter

Choose a filter from the left panel