Frontgrade Technologies, a leading provider of high-reliability electronic solutions for space and national security missions, announced the expansion of its Magnetoresistive Random Access Memory (MRAM) product line. The expanded MRAM family now includes two new series, the Dual Quad Serial Peripheral Interface (Dual QSPI) series and the Parallel series, offering a comprehensive range of high-speed, non-volatile memory solutions designed for aerospace, defense, and industrial applications. These products provide exceptional reliability and efficiency in systems where data integrity and mission assurance are paramount.
Dual QSPI: Fast, Reliable, and Efficient
Built on Spin-Transfer Torque (STT-MRAM) technology, the Dual QSPI series offers a wide range of densities, 128Mb and 1/2/4/8Gb. These new devices bring flash-like non-volatility with SRAM-level speed and endurance. They retain data during power loss, eliminating the need for complex backup systems. The Dual QSPI interface enables high-speed, synchronous communication and seamless integration into new or existing architectures. The new MRAMs are available in a 56-ball FBGA package for the 128Mb version and a 224-ball FBGA package for the 1/2/4/8Gb versions. Rated for operation from –40°C to +125°C, the Dual QSPI series is well-suited for use in harsh environments.
Designed for boot, configuration, code execution, and data logging, it provides non-volatile data storage and operates reliably under intense radiation exposure. With a Dual QSPI interface, it supports fast boot and execute-in-place functions while maintaining unlimited read endurance, 10¹6 write cycles, and 20-year data retention, all without wear-leveling. The wide density range allows for future upgrade paths to support improvements in system capacity
Qualified to Frontgrade Space PEM Level 1 and 2 standards, the Dual QSPI ensures Single Event Upset immunity and up to 100 krad(Si) ionizing dose resilience. It enables space system designers to store multiple boot images and simplify architectures while improving efficiency and mission reliability.
Parallel: High-Density, Radiation-Resilient Memory
The 1/2/4/8Gb Parallel series delivers higher density with the same endurance and radiation resilience. Combining non-volatility, speed, and low power consumption, these devices streamline system design for long-duration space and defense applications. A parallel x32 interface provides 45 ns read/write access, delivering SRAM-like performance with permanent data retention. The upset-immune architecture and multi-bit error correction ensure stable operation in radiation-prone environments.
Qualified to Frontgrade’s Space PEM Level 1 and 2 standards, the Parallel MRAM withstands 100 krad(Si) ionizing dose and guarantees SEU immunity, unlimited read endurance, 10¹6 write cycles, and 20-year data retention at elevated temperatures.
“Frontgrade’s expanded MRAM family represents a significant advancement in high-reliability memory technology,” said Lorne Graves, Senior Vice President and Chief Technology Officer. “By combining the speed and endurance of SRAM with the non-volatility and radiation resilience of MRAM, we’re delivering a unified memory platform that simplifies system design, improves efficiency, and ensures mission success across aerospace, defense, and industrial applications.”
Together, Frontgrade’s MRAM devices deliver the performance, endurance, and reliability required for modern mission-critical systems. With instant data retention, low latency, and efficient operation, these devices enable faster boot times, longer mission life, and greater system confidence. The product family spans a scalable density range that enables future upgrade paths without requiring redesign of the board, providing customers with long-term flexibility and simplified lifecycle management.
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