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GaN Power Transistors for Space Applications - Page 2

253 GaN Power Transistors from 10 Manufacturers meet your specification.
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253 GaN Power Transistors from 10 Manufacturers
253 Products from 10 Manufacturers
Page 2 of 17
ICPB1020 Image
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Microchip Technology - ICPB1020

GaN Power Transistor from Microchip Technology
Description:DC-14 GHz GaN-on-SiC HEMT Transistor

Product Specs

Drain Source Voltage:
28 V
Package Type:
Surface Mount
Dimensions:
0.81 x 4.56 Inch
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Infineon Technologies - IGC037S12S1

GaN Power Transistor from Infineon Technologies
Description:120 V GaN Transistor for Space Application

Product Specs

Gate Threshold Voltage:
-6.5 to 6.5 V
Drain Source Voltage:
120 V
Drain Source Resistance:
2.7 mOhms
Continous Drain Current:
19 to 71 A
Pulsed Drain Current:
270 to 520 A
Total Charge:
10 nC
Input Capacitance:
1000 to 1100 pF
Output Capacitance:
500 to 550 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-6
Dimensions:
3 x 5 mm
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TDG100E90BSP Image
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Teledyne e2v HiRel Electronics - TDG100E90BSP

GaN Power Transistor from Teledyne e2v HiRel Electronics
Description:100V, E-Mode Bottom Side Cooled GaN Transistor

Product Specs

Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 mOhms
Continous Drain Current:
65 to 90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.6 x 4.6 x 0.5 mm
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ISL73023SEH Image
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Renesas - ISL73023SEH

GaN Power Transistor from Renesas
Description:100 V N-Channel GaN Power Transistor

Product Specs

Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 mOhms
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38535, MIL-STD-883
Standard:
MIL-PRF-38535L Class-V
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD, Hermetically Sealed
Dimensions:
6050 x 2300 x 685 µm
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EPC2215 Image
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Efficient Power Conversion - EPC2215

GaN Power Transistor from Efficient Power Conversion
Description:200 V, 162 A Enhancement Mode GaN Power Transistor

Product Specs

Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
6 to 8 mOhms
Continous Drain Current:
32 A
Pulsed Drain Current:
162 A
Total Charge:
13.6 to 17.7 nC
Input Capacitance:
1356 to 1790 pF
Output Capacitance:
390 to 585 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Dimensions:
4.6 x 1.6 mm
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EPC7004BSH Image
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EPC Space - EPC7004BSH

GaN Power Transistor from EPC Space
Description:100 V Radiation Hardened Power eGaN

Product Specs

Drain Source Voltage:
100 V
Drain Source Resistance:
13 to 16 mOhms
Continous Drain Current:
46 A
Pulsed Drain Current:
184 A
Total Charge:
7 to 11 nC
Input Capacitance:
797 to 1400 pF
Output Capacitance:
411 to 700 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.6 x 3.8 mm
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TDG650E30BSP Image
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Teledyne Defense Electronics - TDG650E30BSP

GaN Power Transistor from Teledyne Defense Electronics
Description:650V E-Mode Bottom Side Cooled GaN Transistor

Product Specs

Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 150 mOhms
Continous Drain Current:
25 to 30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.1 to 4.3 nS
Turn-off Delay Time:
8 to 8.2 nS
Rise Time:
3.7 to 4.9 nS
Fall Time:
3.4 to 5.2 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.1 x 8.5 x 0.56 mm
more info
CHKA012b-SYA Image
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United Monolithic Semiconductors - CHKA012b-SYA

GaN Power Transistor from United Monolithic Semiconductors
Description:130W Packaged Power Transistor

Product Specs

Continous Drain Current:
3.9 A (Saturated)
Temperature operating range:
-40 to 85 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD
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IGN1011S3600 Image
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Integra Technologies, Inc. - IGN1011S3600

GaN Power Transistor from Integra Technologies, Inc.
Description:L-Band GaN Power Transistor

Product Specs

Drain Source Voltage:
400 V
Continous Drain Current:
144 A
Temperature operating range:
-55 to 225 Degree C
RoHS Compliant:
Yes
Package Type:
Flange
Package:
Epoxy-sealed ceramic lid
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Microchip Technology - 1214GN-600VHE

GaN Power Transistor from Microchip Technology
Description:50 V GaN Transistor for Space Application

Product Specs

Drain Source Voltage:
50 V
Package Type:
Surface Mount
Package:
55-KR
Dimensions:
0.385 x 1.03 Inch
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Infineon Technologies - IGLD65R110D2

GaN Power Transistor from Infineon Technologies
Description:650 V GaN Transistor for Space Application

Product Specs

Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
110 to 240 mOhms
Continous Drain Current:
14 A
Pulsed Drain Current:
-30 to 30 A
Total Charge:
2.4 nC
Input Capacitance:
170 pF
Output Capacitance:
29 pF
Turn-on Delay Time:
8 nS
Turn-off Delay Time:
10 nS
Rise Time:
7 nS
Fall Time:
20 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
more info
TDG100E90TEP Image
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Teledyne e2v HiRel Electronics - TDG100E90TEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
Description:Top Side Cooled, 100 V E-Mode GaN Transistor

Product Specs

Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 mOhms
Continous Drain Current:
65 to 90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7 x 4 x 0.54 mm
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ISL73020SEH Image
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Renesas - ISL73020SEH

GaN Power Transistor from Renesas
Description:40 V Radiation-Hardened GaN Power Transistor

Product Specs

Drain Source Voltage:
40 V
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EPC2067 Image
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Efficient Power Conversion - EPC2067

GaN Power Transistor from Efficient Power Conversion
Description:40 V Enhancement Mode Power Transistor

Product Specs

Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.3 to 1.55 mOhms
Continous Drain Current:
69 A
Pulsed Drain Current:
409 A
Total Charge:
17.1 to 22.3 nC
Input Capacitance:
2178 to 3267 pF
Output Capacitance:
1071 to 1607 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Dimensions:
2.85 x 3.25 mm
more info
EPC7007BC Image
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EPC Space - EPC7007BC

GaN Power Transistor from EPC Space
Description:200 V Radiation Hardened Power eGaN

Product Specs

Drain Source Voltage:
200 V
Drain Source Resistance:
21 to 29 mOhms
Continous Drain Current:
24 A
Pulsed Drain Current:
96 A
Total Charge:
5.4 to 7 nC
Input Capacitance:
525 to 1400 pF
Output Capacitance:
256 to 360 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.6 x 3.8 mm
more info
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