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Space Qualified MOSFETs from Manufacturers in Germany

302 Space Qualified MOSFETs from 1 Manufacturer meet your specification.
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302 Space Qualified MOSFETs from 1 Manufacturer
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IRHG9110 Image
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Infineon Technologies - IRHG9110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Quad
Continous Drain Current:
-0.75 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHG567110 Image
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Infineon Technologies - IRHG567110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V Combination 2N-2P Channel Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel, P-Channel
Number of Channel:
Quad
Continous Drain Current:
-0.96 to 1.6 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
290 to 690 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHQ57214SE Image
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Infineon Technologies - IRHQ57214SE

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
1.9 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1800 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHLG77214 Image
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Infineon Technologies - IRHLG77214

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
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IRHQ9110 Image
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Infineon Technologies - IRHQ9110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V Quad P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channel:
Quad
Continous Drain Current:
-2.3 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHLUC7670Z4 Image
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Infineon Technologies - IRHLUC7670Z4

Space Qualified MOSFETs from Infineon Technologies
Description:60 V Radiation Hardened Logic Level Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel, P-Channel
Number of Channel:
Dual
Continous Drain Current:
-0.65 to 0.89 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
750 to 1600 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-6
more info
IRHQ567110 Image
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Infineon Technologies - IRHQ567110

Space Qualified MOSFETs from Infineon Technologies
Description:Radiation-Hardened N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel, P-Channel
Number of Channel:
Quad
Continous Drain Current:
-2.8 to 4.6 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
270 to 1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHQ6110 Image
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Infineon Technologies - IRHQ6110

Space Qualified MOSFETs from Infineon Technologies
Description:Radiation-Hardened 2N-2P Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel, P-Channel
Number of Channel:
Quad
Continous Drain Current:
-2.2 to 3 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
600 to 1100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
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IRHG597110 Image
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Infineon Technologies - IRHG597110

Space Qualified MOSFETs from Infineon Technologies
Description:Radiation Hardened P-Channel Power MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Quad
Continous Drain Current:
-0.96 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
960 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHG57110 Image
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Infineon Technologies - IRHG57110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
290 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHSLNA57064 Image
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Infineon Technologies - IRHSLNA57064

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHLUC7970Z4 Image
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Infineon Technologies - IRHLUC7970Z4

Space Qualified MOSFETs from Infineon Technologies
Description:-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
P-Channel
Number of Channel:
Dual
Continous Drain Current:
-0.65 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1600 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-6
more info
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IRHG6110 Image
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Infineon Technologies - IRHG6110

Space Qualified MOSFETs from Infineon Technologies
Description:Radiation-Hardened 2N-2P Channel 100 V Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel, P-Channel
Number of Channel:
Quad
Continous Drain Current:
-0.75 to 1 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
600 to 1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHSLNA57Z60 Image
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Infineon Technologies - IRHSLNA57Z60

Space Qualified MOSFETs from Infineon Technologies
Description:30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHLQ7S7214 Image
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Infineon Technologies - IRHLQ7S7214

Space Qualified MOSFETs from Infineon Technologies
Description:250 V Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
2.6 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-Pin LCC
more info
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