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VPT Components - JANSR2N7480U3

Space Qualified MOSFETs from VPT Components

Description:N-Channel Radiation Hardened MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/703

Transistor Polarity:

N-Channel

Forward Transconductance:

16 s

Continous Drain Current:

10 uA

Drain Source Breakdown Voltage:

60 V

Gate to Drain Charge:

15 nC

Drain Source Resistance:

0.06 Ohms

Gate to Source Charge:

10 nC

Turn on Delay Time:

25 nS

Turn off Delay Time:

35 nS

Recovery Time:

125 nS

Rise Time:

100 nS

Fall Time:

30 nS

Temperature operating range:

-55 to 150 Degree C

Package:

TO-276AA, SMD-0.5

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STMicroelectronics - STRH8N10

Space Qualified MOSFETs from STMicroelectronics

Description:100 V Radiation-Hardened N-Channel Power MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750E

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

6 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

72 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

0 to 62.5 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD.5

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VPT Components - JANSR2N7481U3

Space Qualified MOSFETs from VPT Components

Description:N-Chanel Radiation Hardened MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/703

Transistor Polarity:

N-Channel

Forward Transconductance:

13 s

Continous Drain Current:

10 uA

Drain Source Breakdown Voltage:

100 V

Gate to Drain Charge:

20 nC

Drain Source Resistance:

0.11 Ohms

Gate to Source Charge:

7.4 nC

Turn on Delay Time:

25 nS

Turn off Delay Time:

35 nS

Recovery Time:

250 nS

Rise Time:

100 nS

Fall Time:

30 nS

Temperature operating range:

-55 to 150 Degree C

Package:

TO-276AA, SMD-0.5

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Infineon Technologies - IRHQ9110

Space Qualified MOSFETs from Infineon Technologies

Description:100 V Quad P-Channel MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Transistor Polarity:

P-Channel

Number of Channel:

Quad

Continous Drain Current:

-2.3 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

1100 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

12 W

Temperature operating range:

-55 to 150 Degree C

Package:

28-pin LCC

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STMicroelectronics - STRH40N6

Space Qualified MOSFETs from STMicroelectronics

Description:Radiation Hardened 60 V N-channel Power MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750E

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

30 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

76 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD.5

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VPT Components - JANSR2N7485U3

Space Qualified MOSFETs from VPT Components

Description:N-Chanel Radiation Hardened MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/704

Transistor Polarity:

N-Channel

Continous Drain Current:

10 uA

Drain Source Breakdown Voltage:

130 V

Drain Source Resistance:

0.16 Ohms

Package:

SMD-0.5, TO-267AA

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Infineon Technologies - IRHLUC7670Z4

Space Qualified MOSFETs from Infineon Technologies

Description:60 V Radiation Hardened Logic Level Power MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode, P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel, P-Channel

Number of Channel:

Dual

Continous Drain Current:

-0.65 to 0.89 A

Drain Source Breakdown Voltage:

-60 to 60 V

Drain Source Resistance:

750 to 1600 milliohm

Gate Source Voltage:

-10 to 10 V

Power Dissipation:

1 W

Temperature operating range:

-55 to 150 Degree C

Package:

LCC-6

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Infineon Technologies - IRHQ567110

Space Qualified MOSFETs from Infineon Technologies

Description:Radiation-Hardened N-Channel Power MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode, P-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel, P-Channel

Number of Channel:

Quad

Continous Drain Current:

-2.8 to 4.6 A

Drain Source Breakdown Voltage:

-100 to 100 V

Drain Source Resistance:

270 to 1200 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

12 W

Temperature operating range:

-55 to 150 Degree C

Package:

28-pin LCC

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VPT Components - JANSR2N7479U3

Space Qualified MOSFETs from VPT Components

Description:N-Chanel Radiation Hardened MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/703

Transistor Polarity:

N-Channel

Continous Drain Current:

10 uA

Drain Source Breakdown Voltage:

30 V

Drain Source Resistance:

0.035 Ohms

Package:

TO-276AA, SMD-0.5

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Infineon Technologies - IRHQ6110

Space Qualified MOSFETs from Infineon Technologies

Description:Radiation-Hardened 2N-2P Channel MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode, P-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel, P-Channel

Number of Channel:

Quad

Continous Drain Current:

-2.2 to 3 A

Drain Source Breakdown Voltage:

-100 to 100 V

Drain Source Resistance:

600 to 1100 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

12 W

Temperature operating range:

-55 to 150 Degree C

Package:

28-pin LCC

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VPT Components - JANSR2N7478T1

Space Qualified MOSFETs from VPT Components

Description:N-Channel Radiation Hardened MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/697

Transistor Polarity:

N-Channel

Continous Drain Current:

10 uA

Drain Source Breakdown Voltage:

30 V

Drain Source Resistance:

0.009 Ohms

Package:

TO-254AA

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Infineon Technologies - IRHG597110

Space Qualified MOSFETs from Infineon Technologies

Description:Radiation Hardened P-Channel Power MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Quad

Continous Drain Current:

-0.96 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

960 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

1.4 W

Temperature operating range:

-55 to 150 Degree C

Package:

MO-036AB

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VPT Components - JANSR2N7489T3

Space Qualified MOSFETs from VPT Components

Description:N-Channel Radiation Hardened MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/705

Transistor Polarity:

N-Channel

Continous Drain Current:

10 uA

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

0.54 Ohms

Package:

TO-257AA

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Infineon Technologies - IRHG57110

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Quad

Continous Drain Current:

1.8 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

290 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

1.4 W

Temperature operating range:

-55 to 150 Degree C

Package:

MO-036AB

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VPT Components - JANSR2N7556T3

Space Qualified MOSFETs from VPT Components

Description:N-Channel Radiation Hardened MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/705

Transistor Polarity:

N-Channel

Continous Drain Current:

10 uA

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

1.5 Ohms

Package:

TO-257AA

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