100 V Subminiature Hyperfast Recovery Rectifier


Space Qualified Diode by Solid State Devices (311 more products)

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JANS1N8255US Image

The JANS1N8255US from Solid State Devices is a Space-Qualified Diode with a peak repetitive reverse voltage of 100 V and an average rectified forward current of 6 A. It has a reverse leakage current of 100 μA and a junction capacitance of 55 pF. This hermetically sealed rectifier has a breakdown voltage of 110 V and a recovery time of 30 ns. It has a peak surge current of 125 A and an instantaneous forward voltage drop of 1.25 V. This MIL-PRF-19500/774-compliant rectifier has low reverse leakage and is based on void-free ceramic frit glass construction suitable for high-efficiency applications.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
    Solid State Devices
  • Description
    100 V Subminiature Hyperfast Recovery Rectifier

General Parameters

  • Section
    RF Diode
  • Types of Diode
    Fast Recovery Diode
  • Forward Current
    6 A
  • Repetitive Peak Reverse Voltage
    100 V
  • Recovery Time
    30 ns
  • Temperature operating range
    -65 to 175 Degree C
  • Package Type
    Surface Mount

Technical Documents